Work

A Comparative Study of Short Channel Effects in 3-D FinFET with High-K Gate Di-electric

Year: 2021

Type: conference-paper

Source: International Conference in Advances in Power, Signal, and Information Technology (APSIT)

DOI: 10.1109/apsit52773.2021.9641388

Authors: Rao Muhammad Asif, Saif Ur Rehman, Ateeq Ur Rehman, Mohit Bajaj, Subhashree Choudhury, T.P. Dash

Institutions: Superior University, Government College University, Lahore, National Institute of Technology Delhi, Siksha O Anusandhan University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4200529175

FWCI: 0.771

Cites: 20

Cited by: 6

Related to: 10