Work

High thermal stability of doped oxide semiconductor for monolithic 3D integration

Year: 2021

Type: article

Source: MRS Bulletin

DOI: 10.1557/s43577-021-00230-0

Authors: Hiroki Kawai, Junji Kataoka, Nobuyoshi Saito, Tomomasa Ueda, Takamitsu Ishihara, Keiji Ikeda

Institution: KIOXIA Corporation (Japan)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4206571359

FWCI: 0.22

Cites: 49

Cited by: 10

Related to: 10