Work

Vertical MoS2 transistors with sub-1-nm gate lengths

Year: 2022

Type: article

Source: Nature

DOI: 10.1038/s41586-021-04323-3

Authors: Fan Wu, He Tian, Yang Shen, Zhan Hou, Jie Ren, Guangyang Gou, Yabin Sun, Yi Yang, Tian-Ling Ren

Institutions: Beijing National Research Center for Information Science and Technology, Tsinghua University, East China Normal University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Natural Science Foundation of China, Tsinghua University, Beijing Innovation Center for Future Chip

Awards: G1199722067, G1307125487, G1529395071, G1538068329, G1767643052, G1975398193, G3368292692, G5457932994, G6407540433, G7328491752

OpenAlex ID: W4221136070

FWCI: 37.54

Cites: 42

Cited by: 636

Related to: 10