Year: 2022
Type: article
Abstract: Complex permittivity measurements of irradiated high-resistivity float-zone silicon have been performed in this letter from microwave to millimeter-wave frequencies employing three different resonance techniques. It has been proven that the irradiated silicon exhibits resistivity of the intrinsic silicon at temperatures larger than 295 K and the loss tangent due to phonon absorption reaches about 10−5at room temperature. The total loss tangent of the room-temperature irradiated silicon is smaller than$6\times10$−5at frequencies larger than 5 GHz. The real part of the complex permittivity of silicon linearly increases with temperature for$T $> 200 K.
Institutions: Warsaw University of Technology, Central Office of Measures
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,195
OpenAlex ID: W4226502623