Work

Characterization on Surface Morphology of GaN Layer Deposited on 2D MoS2 Developed by CVD System

Year: 2020

Type: conference-paper

Source: Annual Southeast Asian International Seminar (ASAIS)

DOI: 10.5220/0010537900003153

Authors: Iwan Susanto, Ing-Song Yu, Chi-Yu Tsai, Yen-Ten Ho, Ping-Yu Tsai, Dianta Mustofa Kamal, . Belyamin, Sulaksana Permana

Institutions: Jakarta State Polytechnic, National Dong Hwa University, National Yang Ming Chiao Tung University, National Chung Shan Institute of Science and Technology, University of Indonesia

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4239101102

FWCI:

Cites:

Cited by:

Related to: 10