Work

Numerical simulation of field effect transistors in 4H and 6H-SiC

Year: 2002

Type: conference-abstract

Source: International Conference on Novel Applications of Wide Bandgap Layers

DOI: 10.1109/wbl.2001.946605

Authors: H.E. Nilsson, K. Bertilsson, E. Dubaric, M. Hjelm

Institution: Mid Sweden University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4239103013

Cites:

Cited by: 2

Related to: 10