Work

InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm

Year: 2011

Type: article

Source: Applied Physics Express

DOI: 10.1143/apex.4.054201

Authors: Ryousuke Terao, Toru Kanazawa, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto

Institution: Tokyo Institute of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Awards: InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits, Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves

OpenAlex ID: W4244093052

FWCI: 5.271

Cites: 8

Cited by: 34

Related to: 10