Electrical Characteristics of WSi2Nanocrystal Capacitors with Barrier-Engineered High-kTunnel Layers
Year: 2011
Type: article
Abstract: Nanocrystal-floating gate capacitors with WSi 2 nanocrystals and high- k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi 2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO 2 /HfO 2 /Al 2 O 3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al 2 O 3 /HfO 2 /Al 2 O 3 (2/1/3 nm) (AHA) tunnel layer. When Δ V FB is about 1 V after applying voltage at ±8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 µs, respectively. In particular, the device with WSi 2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 10 4 cycles.
Institutions: Hanyang University, Kwangwoon University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funder: Hanyang University
OpenAlex ID: W4246014456