Work

Surface Electronic Properties of Si‐Doped AlGaN and Thermionic Emission Characteristics with Adsorption of Alkali Metal Atoms

Year: 2019

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.201900719

Authors: Shigeya Kimura, Hisashi Yoshida, Shota Uchida, Akihisa Ogino

Institutions: Toshiba (Japan), Shizuoka University

Language: English

Topic: Photocathodes and Microchannel Plates

Subfield: Instrumentation

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Development of Novel Electron Emitter for Photon Enhanced Thermionic Emission Using Thin Film Semiconductor Material

OpenAlex ID: W4246760155

FWCI: 1.207

Cites: 21

Cited by: 8

Related to: 10