Work

Simulation of <110> nMOSFETs with a Tensile Strained Cap Layer

Year: 2008

Type: conference-abstract

Source: ECS Meeting Abstracts

DOI: 10.1149/ma2008-02/37/2377

Authors: Fabian Bufler, Frederik O. Heinz, Alexander Tsibizov, Mohamed Oulmane

Institutions: Integrated Systems Laboratory, Synopsys (Switzerland)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4249733347

Cites:

Cited by:

Related to: 10