Year: 2018
Type: article
Abstract: In the early 2000-ies, world leaders in the eld of computer engineering, such companies as IBM, Intel and Samsung Electronics announced the development of a new technology for the production of boards based on multilayer lms HfO2Al2O3 on a silicon pad using the method of atomic layer deposition.The board has a high dielectric constant value thus making it possible to produce smaller transistors with increased operational speed, to reduce leakage current and electric energy consumption.It has been known that hafnium oxide is used in the production of optical devices, resistors, electronic ceramics, neutron absorption compositions, and catalysts.High purity of material is one of key conditions for its application.As source material, hafnium concentrate was used that was enriched to 10% in the form of K2(ZrHf)F6 salt the product of fractional crystallization of zirconium and hafnium uorides in the production of zirconium for nuclear applications.Another source material is a HFO2 commercial-grade hafnium oxide produced at Vilnogorsk Mining and Smelting Works.Key process stages are fusion with alkali at a temperature of 800 • C, dissolution in nitric acid and extraction.The impurities content of resultant hafnium re-extract is 105% (mass).The prime objective of the process technology is the preservation of hafnium purity in its oxide production, which is attained by the application of materials and equipment items having a high corrosion resistance, such as stainless steel, crucibles made of high-purity silicon, reaction vessels made of zirconium and uoroplastic.Centrifugal extractors allow the key critical process of hafnium extraction purication to be suciently eective, resulting in obtaining the product of a required 99.99% purity.Physical properties of hafnium oxide are presented in sucient detail in.Hafnium oxide can by produced using various methods to be selected based on the requirements to product quality, process eciency and cost considerations.
Source: Acta Physica Polonica A
Authors: A.P. Mukhachov, O.A. Kharitonova, O.A. Terentieva
Institution: Dniprovsk State Technical University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4253197876