Work

KPFM - Raman Spectroscopy Coupled Technique for the Characterization of Wide Bandgap Semiconductor Devices

Year: 2022

Type: article

Abstract: A non-destructive technique for the characterization of the doped regions inside wide bandgap (WBG) semiconductor structures of power devices is presented. It consists in local measurements of the surface potential by Kelvin Probe Force Microscopy (KPFM) coupled to micro-Raman spectroscopy. The combined experiments allow to visualize the space charge extent of the doped region using the near-field mapping and to estimate its dopant concentration using the Raman spectroscopy. The technique has been successfully applied for the characterization of a WBG SiC (silicon carbide) device.

Source: Materials science forum

DOI: 10.4028/p-c35702

Authors: Nicolas Bercu, Mihai Lazar, Olivier Simonetti, Pierre Michel Adam, Mélanie Brouillard, Louis Giraudet

Institutions: Laboratoire de Recherche en Nanosciences, Université de Reims Champagne-Ardenne, Université de Technologie de Troyes

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funder: Agence Nationale de la Recherche

Award: Graduate School in Nano-optics and Nanophotonics