Year: 2022
Type: conference-paper
Abstract: Insulated gate bipolar transistor(IGBT) modules are widely used in inverters as power switching devices. In actual working conditions, the failure of bonding wires is one of the most common failure modes. In the current device reliability evaluation, the influence of bonding wire failure is ignored, which may easily cause the subsequent evaluation results to deviate from the reality. In this paper, the influence of the gradual failure of the bonding wire on the transient thermal impedance of the device is explored, and the electro-thermal coupling model of the device is constructed. The simulation results show that the transient thermal impedance of the device increases with the gradual failure of the bonding wire. An experimental platform for transient thermal resistance measurement was built to verify the accuracy of the simulation results.
Institution: State Grid Corporation of China (China)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4281944293