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The same band alignment of two hybrid 2D/3D vertical heterojunctions formed by combining monolayer MoS2 with semi-polar (11–22) GaN and c-plane (0001) GaN

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Year: 2022
Type: article
Source: Applied Surface Science
DOI: 10.1016/j.apsusc.2022.153965
Authors: Shu'an Xing, Guijuan Zhao, Bangyao Mao, Heyuan Huang, Lianshan Wang, Xunshuan Li, Wenge Yang, Guipeng Liu, Jianhong Yang
Institutions: Lanzhou University, Chinese Academy of Sciences, Institute of Semiconductors
Language: English

Topic: 2D Materials and Applications
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences

Open Access status: green

Funders: National Natural Science Foundation of China, Natural Science Foundation of Gansu Province, National University's Basic Research Foundation of China, Fundamental Research Funds for the Central Universities
Awards: G1162551323, G1865632032, G4526573641, G7087590043
OpenAlex ID: W4282920157
FWCI: 0.727
Cites: 53
Cited by: 13
Related to: 10
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