Self-powered UV photodetectors and imaging arrays based on NiO/IGZO heterojunctions fabricated at room temperature
Year: 2022
Type: article
Abstract: Self-powered UV photodetectors and imaging arrays based on p-type NiO/n-type InGaZnO (IGZO) heterojunctions are fabricated at room temperature by using ratio-frequency magnetron sputtering. The p-n heterojunction exhibits typical rectifying characteristics with a rectification ratio of 7.4×10 4 at a ±4 V applied bias. A high photo-responsivity of 28.8 mA/W is observed under zero bias at a wavelength of 365 nm. The photodetector possesses a fast response time of 15 ms which is among the best in reported oxide-based p-n junction-based UV photodetectors. Finally, recognition of an “H” pattern is demonstrated by a 10×10 photodetector array at zero bias. The results indicate that the NiO/IGZO based photodetectors may have a great potential in constructing large-scale self-powered UV imaging systems.
Source: Optics Express
DOI: 10.1364/oe.463926
Institutions: Shandong University, University of Manchester
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
OpenAlex ID: W4283815693