Work

Collector-gate-controlled lateral IGBT for reduction of on-state voltage and turn-off loss

Year: 2022

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd49238.2022.9813606

Authors: Kazuki Tani, Kenji Hara, Tomoyasu Furukawa, Kenji Sakurai, Tomoyuki Utsumi

Institution: Hitachi (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4284897415

FWCI: 0.777

Cites: 5

Cited by: 2

Related to: 10