Work

Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

Year: 2022

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2022.3170862

Authors: Xiao Zou, Jiyue Zou, Lu Liu, Hongjiu Wang, Jing-Ping Xu

Institutions: Jianghan University, Huazhong University of Science and Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G2730049166, G986724856

OpenAlex ID: W4285248111

FWCI: 0.595

Cites: 35

Cited by: 9

Related to: 10