GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting
Year: 2022
Type: article
Abstract: . It indicates NWs with a better intrinsic optoelectronic quality than what could be expected from TEM images or deduced from electrical measurements. Optical and electronic simulations provide insights into the main absorption and electrical losses, and guidelines to design and fabricate higher-efficiency devices. It suggests that improvements at the n-type contact (GaInP/ITO) are key to unlocking the potential of next generation NW solar cells.
Source: Nanoscale
DOI: 10.1039/d2nr02652j
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4288780459