Work

The role of SiF4 physisorption in the cryogenic etching process of silicon

Year: 2018

Type: conference-paper

Source: HAL

Authors: Antoun, Gaëlle, Lefaucheux, Philippe, Tillocher, Thomas, Dussart, Remi, Shigeru, Tahara, Yamazaki, Kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru

Institutions: Groupe de Recherches sur l'Energétique des Milieux Ionisés, Tokyo Electron (Japan)

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4289293175

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