Copper halide anion engineering for p-channel electrolyte-gated transistors with superior operational reliability
Year: 2022
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/d2tc02062a
Institutions: Inha University, Chungnam National University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4290805086
