Work

The Effect of Ionization Damage on Displacement Damage in AlGaN/GaN HEMTs

Year: 2022

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2022.3199269

Authors: Pengfei Wan, Jianqun Yang, Hao Jiang, Yuanting Huang, Ling Lv, Lei Dong, Xiaoqing Yue, Bin Zhang, Gang Lin, Guojian Shao, Weiqi Li, Xiaodong Xu, Xiuhai Cui, Xingji Li

Institutions: Harbin Institute of Technology, Xidian University, The 28th Research Institute of China Electronics Technology Group Corporation

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4292260412

FWCI: 1.021

Cites: 46

Cited by: 17

Related to: 10