Work

Study of Dopant Activation in Arsenic-Implanted Laser Annealed Si By Differential Hall Effect Metrology (DHEM)

Year: 2022

Type: conference-paper

Source: ECS Transactions

DOI: 10.1149/10904.0329ecst

Authors: Abhijeet Joshi, Toshiyuki Tabata, Fabien Roze, Bulent M Basol

Institution: Laser Systems & Solutions of Europe (France)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4298109941

FWCI: 1.064

Cites:

Cited by: 1

Related to: 10