Work

Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements

Year: 2022

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0106485

Authors: Jiarui Gong, Zheyang Zheng, Daniel Vincent, Jie Zhou, Jisoo Kim, Donghyeok Kim, Tien Khee Ng, Boon S. Ooi, Kevin J. Chen, Zhenqiang Ma

Institutions: University of Wisconsin–Madison, Hong Kong University of Science and Technology, King Abdullah University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Air Force Office of Scientific Research

Award: G3519676736

OpenAlex ID: W4300970542

FWCI: 1.516

Cites: 36

Cited by: 20

Related to: 10