Structural and electronic properties of hydrogenated gallium nitride with vacancy and doping defects
Year: 2022
Type: article
Source: Applied Physics A
Authors: D. S. Gomes, J. M. Pontes, S. Azevedo
Institution: Universidade Federal da Paraíba
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G4706161033, G5145962910
OpenAlex ID: W4308908697