Symmetrical VTH/RON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs
Year: 2022
Type: conference-paper
Abstract: We investigate the drift of threshold voltage (VTH) and on-resistance (RON) in p-GaN power HEMTs after being submitted to negative/positive gate stress. Negative (Positive) Gate Stress (NGS/PGS) was applied at a gate-to-source bias of |VNGS| = VPGS= 6 V up to a cumulative stress time of 8×103s at room temperature. We found that during NGS both VTHand RONincreased over stress time, whereas during PGS both parameters decreased and stabilized to the values prior to stress application. This symmetric behavior was maintained after 5 full NGS/PGS stress cycles, indicating the absence of permanent degradation. To further characterize the VTHand RONtransients, the NGS/PGS stress cycles were repeated at different temperatures (T=30-105 °C). While VTHexhibited a strong Τ-dependence (EA≈ 0.6 eV) during NGS, a negligible variation of the VTHtransients with T was found during PGS (EA≈ 0 eV). Instead, RONtransients exhibited approximately the same T-dependence during both NGS and PGS (EA≈ 0.3-0.4 eV).
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4309965733