Work

Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

Year: 2022

Type: article

Abstract: This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-to-absolute-temperature voltage generated using a summing network of PMOS gate-coupled pairs. The measured output voltage and current references from 10 chips ($V_{\mathrm {REF}}$and$I_{\mathrm {REF}}$) at room temperature are 469mV and 1.86nA, respectively. The measured average temperature coefficient of$V_{\mathrm {REF}}$and$I_{\mathrm {REF}}$are 29ppm$/^{\circ} \text{C}$and 822ppm$/^{\circ} \text{C}$over a temperature range from$- 40^{\circ} \text{C}$to$120^{\circ} \text{C}$. The minimum supply voltage of the voltage-current reference is 0.95V, and the total power consumption is 30nW.

Source: IEEE Transactions on Circuits and Systems I Regular Papers

DOI: 10.1109/tcsi.2022.3225574

Authors: Darshan Shetty, Christoph Steffan, Gerald Holweg, Wolfgang Bösch, Jasmin Grosinger

Institutions: Infineon Technologies (Austria), Graz University of Technology

Language: English

Topic: Analog and Mixed-Signal Circuit Design

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,195

Funder: Österreichische Forschungsförderungsgesellschaft