Design of 30 nm multi-finger gate GaN HEMT for high frequency device
Year: 2023
Type: article
Authors: Lijun He, Boyang Zhao, Kang Ma, Chengyun He, Zhiyang Xie, Xing Long, Chaopeng Zhang, Liang She, Fei Qi, Nan Zhang
Institution: Chongqing University of Posts and Telecommunications
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4318945461