Work

500 V breakdown voltage in β ‐Ga 2 O 3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm 2 power figure of merit

Year: 2023

Type: article

Abstract: The authors’ present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐semiconductor field‐effect transistor (LDMOSFET) with β ‐Ga 2 O 3 , which is a large bandgap semiconductor (β‐LDMOSFET), for increasing breakdown voltage (V BR ) and power figure of merit. The fundamental purpose is to use a β ‐Ga 2 O 3 semiconductor instead of silicon material due to its large breakdown field. The characteristics of β ‐LDMOSFET are analysed to those of standard LDMOSFET, such as V BR , ON‐resistance (R ON ), power figure of merit (PFOM), and radio frequency (RF) performances. The effects of RF, such as gate‐drain capacitance (C GD ), gate‐source capacitance (C GS ), transit frequency ( f T ), and maximum frequency of oscillation ( f MAX ) have been investigated. The β ‐LDMOSFET structure outperforms performance in the V BR by increasing it to 500 versus 84.4 V in standard LDMOSFET design. The suggested β ‐LDMOSFET has R ON ~ 2.3 mΩ.cm −2 and increased the PFOM (V BR 2 /R ON ) to 108.6 MW/cm 2 . All the simulations are done with TCAD and simulation models are calibrated with the experimental data.

Source: IET Circuits Devices & Systems

DOI: 10.1049/cds2.12158

Authors: Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

Institution: Semnan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: gold

Estimated APC paid: $2,200