Work

Superior high temperature performance of 8 kV NiO/Ga 2 O 3 vertical heterojunction rectifiers

Year: 2023

Type: article

Source: Journal of Materials Chemistry C

DOI: 10.1039/d3tc01200j

Authors: Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

Institution: University of Florida

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Science Foundation, Defense Threat Reduction Agency

Awards: G772299097, Impact Ionization Coefficients in Ga2O3

OpenAlex ID: W4376622366

FWCI: 2.41

Cites: 55

Cited by: 40

Related to: 10