Investigation of Deep Defects and Their Effects on the Properties of NiO/Β- Ga2O3 Heterojuncion Diodes
Year: 2022
Type: article
Abstract: In this study, the effect of rapid thermal annealing (RTA) on the electrical and optical properties of NiO/ β-Ga2O3 heterojunction diodes was investigated using capacitance-voltage, current-voltage, Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, photoluminescence and micro-Raman spectroscopy techniques, and SILVACO-TCAD numerical simulator. The NiO is designed to be lowly-doped, allowing for the NiO full depletion at zero bias and the study of properties of β-Ga2O3 and its interface with NiO. Micro-Raman results revealed good agreement with the theoretical and experimental results reported in the literature. The photoluminescence intensity of the sample after RTA is five times higher than the fresh sample due to a rise in the density of gallium and oxygen vacancies (VGa + VO) in the annealed β-Ga2O3 samples. The current-voltage characteristics showed that annealed devices exhibited a lower ideality factor at room temperature and higher barrier height compared with fresh samples. The DLTS measurements demonstrated that the number of electrically active traps were different for the two samples. In particular, three and one electron traps were detected in fresh samples and annealed samples, respectively. SILVACO-TCAD was used to understand the distribution of the detected electron E2 trap (Ec-0.15 eV) in the fresh sample and the dominant transport mechanisms. A fairly good agreement between simulation and measurements was achieved considering a surface NiO acceptor density of about 1×1019 cm-3 and E2 trap depth into the surface of β-Ga2O3 layer of about 0.220 µm and the effect of the most observed Ec-0.75 eV trap level in β-Ga2O3. These results unveil comprehensive physics in NiO/β-Ga2O3 heterojunction and suggest that RTA is an essential process for realizing high-performance NiO/β-Ga2O3devices.
Source: Materials Today Electronics
Authors: Abdulaziz Almalki, Labed Madani, Nouredine Sengouga, Sultan Alhassan, Saud Alotaibi, Amra Alhassni, Amjad Almunyif, Jasbinder S. Chauhan, Mohamed Henini, Helder Vinicius Avanço Galeti, Yara Galvão Gobato, Marcio Peron Franco de Godoy, Marcelo B. Andrade, Sérgio Souto, Hong Zhou, Boyan Wang, Ming Xiao, Yuan Qin, Yuhao Zhang
Institutions: University of Nottingham, Taibah University, Sejong University, University of Biskra, Jouf University, Shaqra University, Al Baha University, Princess Nourah bint Abdulrahman University, Universidade Federal de São Carlos, Universidade Federal de Ouro Preto, Universidade de São Paulo, Instituto de Física de São Carlos, Xidian University, Virginia Tech
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,860
OpenAlex ID: W4379745239