Work

Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices

Year: 2023

Type: article

Source: Journal of Alloys and Compounds

DOI: 10.1016/j.jallcom.2023.171096

Authors: Hyeonseung Ji, Yoonseok Lee, Jungang Heo, Sungjun Kim

Institution: Dongguk University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Ministry of Science, ICT and Future Planning, National Research Foundation of Korea, Korea Institute of Energy Technology Evaluation and Planning

Awards: G2193524624, G3430150243

OpenAlex ID: W4381485998

FWCI: 1.425

Cites: 59

Cited by: 20

Related to: 10