Work

Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3 Plasma Treatment

Year: 2023

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2023.3274610

Authors: Dong-Ru Hsieh, Chia-Chin Lee, Tzu-Chieh Hong, Wei-Ju Yeh, Tien-Sheng Chao

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and Technology, Taiwan

Award: Development of Low-Power Consumption Devices by Using the Combination of Vertically Stacked Gate-All-Around and Hf-Based Ferroelectric Material for Edge Computing Based on Artificial Neural Network

OpenAlex ID: W4381936718

FWCI: 0.214

Cites: 32

Cited by: 3

Related to: 10