Work

Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications

Year: 2023

Type: article

Abstract: SiN deposition at low temperatures using the plasma-enhanced atomic layer deposition (PEALD) process is gaining momentum. A high-quality SiN layer deposited using a lower thermal budget and low wet etch rates are desired for front-end-of-line applications in semiconductor industries. In this study, deposition of PEALD SiN is investigated by utilizing a highly reactive trisilylamine silicon precursor and three different reaction partners for a nitrogen precursor. The quality of PEALD SiN layers is compared with the reference standard, low-pressure chemical vapor deposition SiN layers. The properties of different SiN layers are interpreted using FTIR and XPS material characterization techniques. Furthermore, the wet etch rates of as-deposited and annealed PEALD SiN layers are investigated. Finally, the conformality of PEALD SiN layers is assessed in trench and horizontal high aspect ratio structures.

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0002424

Authors: Marco Lisker, Mamathamba Kalishettyhalli Mahadevaiah, Keerthi Dorai Swamy Reddy

Institutions: Technical University of Applied Sciences Wildau, Leibniz Institute for High Performance Microelectronics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung

Awards: G3315601669, Verbundprojekt: Forschungsfabrik Mikroelektronik Deutschland - Fraunhofer-Verbund Mikroelektronik in Kooperation mit den Leibniz-Instituten FBH und IHP - FMD -, Teilvorhaben: Prozessausrüstung für 'More-than-Moore' Technologien in der FMD