Work

Low-temperature, single-source, chemical vapor deposition of molybdenum nitride thin films

Year: 2023

Type: article

Abstract: The 1,4-di-tert-butyl-1,3-diazabutadiene adduct of bis(tert-butylimido)dichloro-molybdenum(VI), (tBuN)2MoCl2⋅dad, was used as a single-source precursor for the chemical vapor deposition of molybdenum nitride from 350–600 °C. Deposition at 400 °C had a growth rate of 55 nm h−1 and was comprised of a mixture of Mo2N and MoN, based on x-ray photoelectron spectroscopy and grazing-incidence x-ray diffraction results. The films are essentially featureless and are as smooth as the underlying substrate, based on atomic force microscopy measurements. Because the depositions could be carried out at a low temperature, there was minimal carbon (1.4%) inclusion in the film as shown by XPS.

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0002830

Authors: Michael A. Land, Justin T. Lomax, Seán T. Barry

Institutions: Carleton University, Western University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Natural Sciences and Engineering Research Council of Canada

Awards: G832689143, New Metallization Precursors for Microelectronic applications