Work

Cryogenic Hysteresis in 110 nm Bulk Silicon MOSFETs for Capacitorless Memory Applications

Year: 2023

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2023.3294638

Authors: Yuanke Zhang, Yuefeng Chen, Jixiang Huang, Shuyang Sun, Jun Xu, Chao Luo, Guoping Guo

Institutions: University of Science and Technology of China, CAS Key Laboratory of Quantum Information, USTC

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G5296589495

OpenAlex ID: W4384080249

FWCI: 0.67

Cites: 33

Cited by: 10

Related to: 10