Work

Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

Year: 2023

Type: article

Source: Journal of Semiconductors

DOI: 10.1088/1674-4926/44/7/072801

Authors: Madani Labed, Ji Young Min, Amina Ben Slim, Nouredine Sengouga, Chowdam Venkata Prasad, Sinsu Kyoung, You Seung Rim

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4385077397

FWCI: 0.301

Cites: 31

Cited by: 5

Related to: 10