Work

Experimental Study and Comparison of Switching Loss Behavior of Si IGBT and SiC MOSFET in Dual Active Bridge Series Resonant Converter

Year: 2023

Type: conference-paper

Source: IEEE International Conference on Environment and Electrical Engineering and IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe)

DOI: 10.1109/eeeic/icpseurope57605.2023.10194837

Authors: Onkar Bhakare, Kousik Ghosh, Surja Sekhar Chakraborty, Kamalesh Hatua

Institution: Indian Institute of Technology Madras

Language: English

Topic: Advanced DC-DC Converters

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4385541932

FWCI: 3.924

Cites: 16

Cited by: 8

Related to: 10