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Investigation of acceleration factors of the HV-H3TRB test on 3.3kV SiC SBDs

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Year: 2023
Type: conference-paper
Source: European Conference on Power Electronics and Applications
DOI: 10.23919/epe23ecceeurope58414.2023.10264596
Authors: Kenji Hatori, Kohei Ebihara, Kazufumi Ishimoto, Ryo Tsuda, Nils Soltau, Shiori Idaka, Eugen Wiesner, Stefan Schönewolf, Oskar Schuster, Michael Hanf
Institutions: Mitsubishi Electric (Japan), Mitsubishi Electric (Germany), Siemens (Germany), University of Bremen
Language: English

Topic: Silicon Carbide Semiconductor Technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDG: Industry, innovation and infrastructure

Open Access status: closed
OpenAlex ID: W4387250435
FWCI: 1.793
Cites: 14
Cited by: 4
Related to: 10
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