Work

Heterointegrated Ga 2 O 3 -on-SiC RF MOSFETs With f T / f max of 47/51 GHz by Ion-Cutting Process

Year: 2023

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2023.3327134

Authors: Xinxin Yu, Wenhui Xu, Yibo Wang, Bing Qiao, Rui Shen, Jianjun Zhou, Zhonghui Li, Tiangui You, Zhenghao Shen, Kai Zhang, Fang-Fang Ren, Dongming Tang, Xin Ou, Genquan Han, Yuechan Kong, Tangsheng Chen, Shulin Gu, Youdou Zheng, Jiandong Ye, Rong Zhang

Institutions: Nanjing University, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, Suzhou Institute of Nano-tech and Nano-bionics, The 28th Research Institute of China Electronics Technology Group Corporation, Xidian University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G281605579, G4259696608, G4700815263, G512247061, G60704672

OpenAlex ID: W4387918008

FWCI: 2.229

Cites: 25

Cited by: 37

Related to: 10