Work

Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit

Year: 2023

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2023.3329053

Authors: Zetao Fan, Maojun Wang, Jin Wei, Muqin Nuo, Jin Zhou, Jiaxin Zhang, Yilong Hao, Bo Shen

Institution: Peking University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4388286386

FWCI: 3.541

Cites: 41

Cited by: 34

Related to: 10