Work

Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications

Year: 2023

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts54660.2023.10310972

Authors: D. Denninghoff, E. Arkun, J.-S. Moon, H. Tran, A. Corrion, G. Siddiqi, D. Fanning, M. Fireman, J. Tai, J. Wong, B. Grabar, C. Dao, I. Milosavljevic, R. Tran, A. Getter, A. Clapper, S. Dadafshar, J. Georgieva, H. Moyer, N. Miller, M. Elliott, R. Gilbert

Institutions: HRL Laboratories (United States), United States Air Force Research Laboratory, Wright-Patterson Air Force Base, U.S. Air Force Research Laboratory Sensors Directorate, Wright Laboratory

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Defense Advanced Research Projects Agency

OpenAlex ID: W4388623751

FWCI: 6.071

Cites: 46

Cited by: 9

Related to: 10