Work

Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers

Year: 2023

Type: conference-paper

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts54660.2023.10311051

Authors: Prateek Kumar Sharma, Vaibhav Ruparelia, Saurabh Sirohi, Uppili S. Raghunathan, Venkata Vanukuru, Vibhor Jain

Institution: GlobalFoundries (United States)

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Defense Advanced Research Projects Agency

OpenAlex ID: W4388623866

FWCI: 0.452

Cites: 9

Cited by: 1

Related to: 10