Parasitic inductance and current spreading of paralleled SiC MOSFETs analysed by impedance modelling
Year: 2023
Type: conference-paper
Source: IET conference proceedings.
Authors: A. Apelsmeier, M. März
Institution: Friedrich-Alexander-Universität Erlangen-Nürnberg
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4388739314