Work

455/610-GHz fT/fMAX InP DHBT technology with demonstration of a beyond-110-GHz-bandwidth large-swing PAM-4 2:1 AMUX-driver

Year: 2023

Type: conference-paper

Abstract: We report on an Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology for integrated circuit design and fabrication. The 0.4×5 µm² DHBT devices exhibit a 455-GHz fT and a 610-GHz fMAX, with a 4 V common-emitter breakdown voltage, the BVCE0, and a peak current gain β of 25. This enabled state-of-the-art 2:1 Analog multiplexer (AMUX)-driver results with beyond-110-GHz bandwidth and 2-Vppd PAM-4 swing at 100 GBd.

Source: HAL

Authors: Davy, Nil, Hersent, Romain, Nodjiadjim, Virginie, Deng, Marina, Chhandak, Mukherjee, Riet, Muriel, Mismer, Colin, Jorge, Filipe, Ardouin, Bertrand, Maneux, Cristell

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information, III V Lab, Laboratoire de l'Intégration du Matériau au Système, Université de Bordeaux, Centre National de la Recherche Scientifique

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: green

Funders: European Commission, Horizon 2020 Framework Programme

Awards: G1535130713, G4937468798, G8072206403

OpenAlex ID: W4388920541

FWCI: 0.448

Cites: 5

Cited by: 1

Related to: 10