Year: 2023
Type: article
Abstract: We report transport studies on the layered van der Waals topological crystalline insulator ${\mathrm{Ta}}_{2}{\mathrm{Pd}}_{3}{\mathrm{Te}}_{5}$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tends to saturate at low temperatures. Low-temperature magnetotransport shows that ${\mathrm{Ta}}_{2}{\mathrm{Pd}}_{3}{\mathrm{Te}}_{5}$ exhibits weak antilocatization (WAL) effect in both perpendicular orientation and parallel orientation, suggesting a contribution of the WAL effect from both topological edge states and bulk states. By measuring the anisotropic magnetoconductance and then subtracting the contribution of bulk states, the WAL effect associated with topological edge states can be revealed and analyzed quantitatively based on the two-dimensional Hikami-Larkin-Nagaoka model. Our results have important implications in understanding the WAL phenomena in ${\mathrm{Ta}}_{2}{\mathrm{Pd}}_{3}{\mathrm{Te}}_{5}$.
Institutions: Zhejiang University of Technology, Zhejiang University of Science and Technology, Fudan University, Westlake University, Hangzhou Normal University, Chinese Academy of Sciences, Ningbo Institute of Industrial Technology, State Key Laboratory of Silicon Materials, Zhejiang University, National Laboratory of Solid State Microstructures, Nanjing University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4389948183