Work

Nanoscale Trench-Gate Self-Aligned C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor using Cap Layer

Year: 2022

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2022.e-4-04

Authors: MASAHIRO WAKUDA, Motomu Kurata, Satoru Saito, Shunichi Ito, Ryo Arasawa, Shinya Sasagawa, Kentaro Sugaya, Yoshikazu Hiura, Hidekazu Miyairi, Yuji Egi, Ryota Hodo, Hitoshi Kunitake, Shunpei Yamazaki

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4390763009

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