Work

NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 1013 Cycles at 20-ns Write Time without Batch Erase

Year: 2022

Type: conference-abstract

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2022.f-4-04

Authors: Shoki Miyata, Satoru Oshita, Hitoshi Kunitake, Yuki Okamoto, Hiroki Inoue, Hiromi Sawai, Kunihiro Fukushima, Yusuke Komura, Takanori Matsuzaki, Yoshiyuki Kurokawa, Tatsuya Onuki, Hajime Kimura, Shinya Sasagawa, Shunpei Yamazaki

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4390763129

Cites:

Cited by:

Related to: 10