Work

HfO2-based ferroelectric-gated variable-area capacitors

Year: 2022

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2022.e-1-04

Authors: Takaaki Miyasako, Shingo Yoneda, Tadasu Hosokura, Masahiko Kimura, Eisuke Tokumitsu

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4390763199

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