Work

A Novel SiC Trench MOSFET with Unilateral P Buried Layer for Improved Oxide Electric Field and Switching Loss

Year: 2023

Type: conference-paper

Source: China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

DOI: 10.1109/sslchinaifws60785.2023.10399651

Authors: Yangyang Wu, Jun Yuan, Kuan Wang, Fei Guo, Wei Chen, Zhijie Cheng, Shaodong Xu, Guoqing Xin, Zhiqiang Wang

Institutions: Hubei Jiufengshan Laboratory, Huazhong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4390944826

FWCI: 3.585

Cites: 10

Cited by: 8

Related to: 10