Work

Electrical properties of n-type phosphorus-doped diamond grown on (113) orientation compared to the conventional (111) and (100) orientations

Year: 2020

Type: conference-paper

Source: HAL

Authors: Pinault-Thaury, M.A., Stenger, Ingrid, Gillet, Rémi, Ouali, Yousef, Temgoua, Solange, Chikoidze, Ekaterina, Dumont, Yves, Jomard, François, Kociniewski, Thierry, Barjon, Julien

Institutions: Groupe d’Étude de la Matière Condensée, Université de Versailles Saint-Quentin-en-Yvelines

Language: English

Topic: Diamond and Carbon-based Materials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4391010797

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